On-Line Multi-Frequency Electrical Resistance Tomography (mfERT) Device for Crystalline Phase Imaging in High-Temperature Molten Oxide

Prima Asmara Sejati, Noritaka Saito, Yosephus Ardean Kurnianto Prayitno, Koji Tanaka, Panji Nursetia Darma, Miku Arisato, Kunihiko Nakashima, Masahiro Takei

研究成果: ジャーナルへの寄稿学術誌査読

2 被引用数 (Scopus)

抄録

An on-line multi-frequency electrical resistance tomography (mfERT) device with a melt-resistive sensor and noise reduction hardware has been proposed for crystalline phase imaging in high-temperature molten oxide. The melt-resistive sensor consists of eight electrodes made of plat-inum-rhodium (Pt-20mass%Rh) alloy covered by non-conductive aluminum oxide (Al2O3) to pre-vent an electrical short. The noise reduction hardware has been designed by two approaches: (1) total harmonic distortion (THD) for the robust multiplexer, and (2) a current injection frequency pair: low fL and high fH, for thermal noise compensation. THD is determined by a percentage evaluation of k-th harmonic distortions of ZnO at f = 0.1~10,000 Hz. The fL and fH are determined by the thermal noise behavior estimation at different temperatures. At f < 100 Hz, the THD percentage is relatively high and fluctuates; otherwise, THD dramatically declines, nearly reaching zero. At the determined fL ≥ 10,000 Hz and fH ≈ 1,000,000 Hz, thermal noise is significantly compen-sated. The on-line mfERT was tested in the experiments of a non-conductive Al2O3 rod dipped into conductive molten zinc-borate (60ZnO-40B2O3) at 1000~1200 °C. As a result, the on-line mfERT is able to reconstruct the Al2O3 rod inclusion images in the high-temperature fields with low error, ςf L, T = 5.99%, at 1000 °C, and an average error 〈ςf L⟩ = 9.2%.

本文言語英語
論文番号1025
ジャーナルSensors
22
3
DOI
出版ステータス出版済み - 2月 1 2022

!!!All Science Journal Classification (ASJC) codes

  • 分析化学
  • 情報システム
  • 原子分子物理学および光学
  • 生化学
  • 器械工学
  • 電子工学および電気工学

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