On phonon confinement effects and free carrier concentration in GaN quantum dots

M. Kuball, J. Gleize, Satoru Tanaka, Y. Aoyagi

研究成果: Contribution to journalArticle査読

抄録

Self-assembled GaN quantum dots (QDs) grown on Al0.15Ga0.85N using Si as anti-surfactant were investigated by resonant Raman scattering. Phonons of GaN QDs of different sizes were probed selectively by using laser excitation energies of 3.53 and 5.08 eV. Phonon confinement effects were evidenced in GaN QDs of 2-3 nm height. Resonant Raman scattering on GaN grown on Al0.23Ga0.77N after the deposition of an increasing amount of Si anti-surfactant, i.e., the morphological transition from a GaN quantum well (2D) to GaN quantum dots (0D), was also investigated.

本文言語英語
ページ(範囲)195-198
ページ数4
ジャーナルPhysica Status Solidi (B) Basic Research
228
1
DOI
出版ステータス出版済み - 11 2001
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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