On the nature of Surface States Stark Effect at clean GaN(0001) surface

Paweł Kempisty, Stanisław Krukowski

研究成果: Contribution to journalArticle査読

26 被引用数 (Scopus)

抄録

Recently developed model allows for simulations of electric field influence on the surface states. The results of slab simulations show considerable change of the energy of quantum states in the electric field, i.e., Stark Effect associated with the surface (SSSE-Surface States Stark Effect). Detailed studies of the GaN slabs demonstrate spatial variation of the conduction and valence band energy revealing real nature of SSSE phenomenon. It is shown that long range variation of the electric potential is in accordance with the change of the energy of the conduction and valence bands. However, at short distances from GaN(0001) surface, the valence band follows the potential change while the conduction states energy is increased due to quantum overlap repulsion by surface states. It is also shown that at clean GaN(0001) surface Fermi level is pinned at about 0.34eV below the long range projection of the conduction band bottom and varies with the field by about 0.31eV due to electron filling of the surface states.

本文言語英語
論文番号113704
ジャーナルJournal of Applied Physics
112
11
DOI
出版ステータス出版済み - 12 1 2012
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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