On the nucleation of graphene by chemical vapor deposition

Baoshan Hu, Hiroki Ago, Carlo M. Orofeo, Yui Ogawa, Masaharu Tsuji

    研究成果: ジャーナルへの寄稿学術誌査読

    14 被引用数 (Scopus)

    抄録

    We demonstrate that homogeneous single-layer graphene can be grown by simply annealing crystalline Cu(111)/c-plane sapphire (α-Al 2O3) at 900 and 1000 °C without additional carbon supply. The resulting graphene film shows a high carrier mobility of 1210 cm2 V-1 s-1. However, the annealing at a lower temperature of 800 °C gives an amorphous carbon film. Further investigations indicate that graphitization of amorphous carbon and/or adsorbed carbon atoms during chemical vapour deposition (CVD) is not simply a consequence of carbon supersaturation, it is also affected by CVD temperature, and crystallographic plane of the underlying metal, which are essentially correlated to the energy barrier of nucleation. Our results provide the direct experimental evidence to elucidate the influencing factors of graphitization of amorphous carbon, and contribute fundamental insight into the nucleation and growth of graphene to improve its quality for applications.

    本文言語英語
    ページ(範囲)73-77
    ページ数5
    ジャーナルNew Journal of Chemistry
    36
    1
    DOI
    出版ステータス出版済み - 1月 2012

    !!!All Science Journal Classification (ASJC) codes

    • 触媒
    • 化学 (全般)
    • 材料化学

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