On the phase transformation of single-crystal 4H-SiC during nanoindentation

Mitsuhiro Matsumoto, Hu Huang, Hirofumi Harada, Koichi Kakimoto, Jiwang Yan

研究成果: Contribution to journalArticle査読

10 被引用数 (Scopus)

抄録

Microstructural changes of single-crystal 4H silicon carbide (SiC) induced by nanoindentation under various conditions were investigated. It was found that nanoindentation at different crystal orientations induced different Raman spectroscopic characteristics. Cross-sectional observation by transmission electron microscopy indicated that a very deep subsurface damage region was formed where dislocations occurring along the basal planes, crystal grains rotation and micro-cracks were observed. The microstructures of the damage regions were strongly affected by the nanoindentation conditions. Coupled analysis of lattice fringes and Raman spectra indicated that a phase transformation from 4H-SiC to 3C-SiC occurred during nanoindentation, which has never been reported before. Furthermore, the 4H to 3C phase transformation strongly depended on the indenter orientation with respect to the SiC crystal. These findings are meaningful for low-damage precision machining of SiC substrates.

本文言語英語
論文番号265303
ジャーナルJournal of Physics D: Applied Physics
50
26
DOI
出版ステータス出版済み - 6 12 2017
外部発表はい

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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