One bond-type migration of phosphorus in silicon by interstitialcy mechanism

Masayuki Yoshida, Yoichi Kamiura, Reiji Tsuruno, Manabu Takahashi, Hajime Tomokage

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

It is assumed that an interstitial phosphorus atom and a self-interstitial, Pi and I, are of the interstitialcy type. One bond-type migration is applied to their migration. It is concluded that there is essentially no difference between the migrations of a P-I pair, (PI), and Pi by the interstitialcy mechanism and between the chemical processes for the formation-dissociation of (PI) and the kick-out mechanism of Pi.

本文言語英語
ページ(範囲)6376-6377
ページ数2
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
37
12
DOI
出版ステータス出版済み - 12 1998

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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