抄録
Bi2Te3 nanosheets have been synthesized on Si substrates by surface-assisted chemical vapor transport. The crumpled Bi 2Te3 sheets grow in the basal plane of the hexagonal structure and are typically nm in thickness (see picture; Te purple, Bi green). Raman studies found that modes involving atom displacement along the c axis that are inactive in the bulk material become Raman-active in the Bi nanosheets.
本文言語 | 英語 |
---|---|
ページ(範囲) | 10397-10401 |
ページ数 | 5 |
ジャーナル | Angewandte Chemie - International Edition |
巻 | 50 |
号 | 44 |
DOI | |
出版ステータス | 出版済み - 10月 24 2011 |
外部発表 | はい |
!!!All Science Journal Classification (ASJC) codes
- 触媒
- 化学 (全般)