One-step synthesis of bismuth telluride nanosheets of a few quintuple layers in thickness

Yimin Zhao; Robert W. Hughes; Zixue Su; Wuzong Zhou; Duncan H. Gregory

doi:10.1002/anie.201104299

One-step synthesis of bismuth telluride nanosheets of a few quintuple layers in thickness

Yimin Zhao, Robert W. Hughes, Zixue Su, Wuzong Zhou, Duncan H. Gregory

先端素子材料部門

研究成果: ジャーナルへの寄稿 › 記事

43 引用（Scopus）

抜粋

Bi₂Te₃ nanosheets have been synthesized on Si substrates by surface-assisted chemical vapor transport. The crumpled Bi ₂Te₃ sheets grow in the basal plane of the hexagonal structure and are typically nm in thickness (see picture; Te purple, Bi green). Raman studies found that modes involving atom displacement along the c axis that are inactive in the bulk material become Raman-active in the Bi nanosheets.

元の言語	英語
ページ（範囲）	10397-10401
ページ数	5
ジャーナル	Angewandte Chemie - International Edition
巻	50
発行部数	44
DOI	https://doi.org/10.1002/anie.201104299
出版物ステータス	出版済み - 10 24 2011

フィンガープリント

All Science Journal Classification (ASJC) codes

Catalysis
Chemistry(all)

これを引用

Zhao, Y., Hughes, R. W., Su, Z., Zhou, W., & Gregory, D. H. (2011). One-step synthesis of bismuth telluride nanosheets of a few quintuple layers in thickness. Angewandte Chemie - International Edition, 50(44), 10397-10401. https://doi.org/10.1002/anie.201104299

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文献にアクセス

10.1002/anie.201104299