Operation of major line bubble propagation path for bloch line memory

K. Matsuyama, K. Chikamatsu, S. Tanaka, T. Suzuki

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

A new type of current access bubble propagation path for the major line of vertical Bloch line memory has been designed and processed on a standard as-grown 5 um bubble garnet film, but having the film thickness of 2.1 um. The bubble propagation path consists of a meandering conductor and high coercive force hard magnetic patterns of CoPt, providing an offset force for the bubble motion. A reasonable bias field margin (14% of mid bias field value) for the bubble propagation was measured in a test chip. The bias field compatibility between bubbles on the major line bubble propagation path and confined stripe domains for minor loop has been confirmed experimentally.

本文言語英語
ページ(範囲)4248-4250
ページ数3
ジャーナルIEEE Transactions on Magnetics
25
5
DOI
出版ステータス出版済み - 9 1989

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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