Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process

Kouta Takahashi; Hiroshi Ikenoue; Mitsuo Sakashita; Osamu Nakatsuka; Shigeaki Zaima; Masashi Kurosawa

doi:10.7567/1882-0786/ab1969

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge_1-xSn_x on SiO₂ fabricated by a low thermal budget process

Kouta Takahashi, Hiroshi Ikenoue, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima, Masashi Kurosawa

ギガフォトンNext GLP共同研究部門

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

7 被引用数 (Scopus)

抄録

A thin-film thermoelectric generator composed of p- and n-type poly-Ge_1-xSn_x (x ∼ 0.02) on a Si(001) covered with SiO₂ has been successfully fabricated by low thermal budget processes (under 300 °C) and demonstrated for the first time. Both the crystallization and dopant activation were simultaneously performed using pulsed UV laser irradiation in flowing water. A recorded activation ratio of Sb in the poly-Ge_1-xSn_x enabled a relatively high power factor (9.2 μ Wcm^-1 K^-2 at RT), which is comparable to the counterparts of n-type Ge_1-xSn_x layers epitaxially grown on InP(001).

本文言語	英語
論文番号	051016
ジャーナル	Applied Physics Express
巻	12
号	5
DOI	https://doi.org/10.7567/1882-0786/ab1969
出版ステータス	出版済み - 5月 1 2019

!!!All Science Journal Classification (ASJC) codes

工学（全般）
物理学および天文学（全般）

文献へのアクセス

10.7567/1882-0786/ab1969

他のファイルとリンク

引用スタイル

@article{0e63daf84074427eb9ab407f2afee422,

title = "Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process",

abstract = "A thin-film thermoelectric generator composed of p- and n-type poly-Ge1-xSnx (x ∼ 0.02) on a Si(001) covered with SiO2 has been successfully fabricated by low thermal budget processes (under 300 °C) and demonstrated for the first time. Both the crystallization and dopant activation were simultaneously performed using pulsed UV laser irradiation in flowing water. A recorded activation ratio of Sb in the poly-Ge1-xSnx enabled a relatively high power factor (9.2 μ Wcm-1 K-2 at RT), which is comparable to the counterparts of n-type Ge1-xSnx layers epitaxially grown on InP(001).",

author = "Kouta Takahashi and Hiroshi Ikenoue and Mitsuo Sakashita and Osamu Nakatsuka and Shigeaki Zaima and Masashi Kurosawa",

note = "Publisher Copyright: {\textcopyright} 2019 The Japan Society of Applied Physics.",

year = "2019",

month = may,

day = "1",

doi = "10.7567/1882-0786/ab1969",

language = "English",

volume = "12",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "5",

}

TY - JOUR

T1 - Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process

AU - Takahashi, Kouta

AU - Ikenoue, Hiroshi

AU - Sakashita, Mitsuo

AU - Nakatsuka, Osamu

AU - Zaima, Shigeaki

AU - Kurosawa, Masashi

PY - 2019/5/1

Y1 - 2019/5/1

N2 - A thin-film thermoelectric generator composed of p- and n-type poly-Ge1-xSnx (x ∼ 0.02) on a Si(001) covered with SiO2 has been successfully fabricated by low thermal budget processes (under 300 °C) and demonstrated for the first time. Both the crystallization and dopant activation were simultaneously performed using pulsed UV laser irradiation in flowing water. A recorded activation ratio of Sb in the poly-Ge1-xSnx enabled a relatively high power factor (9.2 μ Wcm-1 K-2 at RT), which is comparable to the counterparts of n-type Ge1-xSnx layers epitaxially grown on InP(001).

AB - A thin-film thermoelectric generator composed of p- and n-type poly-Ge1-xSnx (x ∼ 0.02) on a Si(001) covered with SiO2 has been successfully fabricated by low thermal budget processes (under 300 °C) and demonstrated for the first time. Both the crystallization and dopant activation were simultaneously performed using pulsed UV laser irradiation in flowing water. A recorded activation ratio of Sb in the poly-Ge1-xSnx enabled a relatively high power factor (9.2 μ Wcm-1 K-2 at RT), which is comparable to the counterparts of n-type Ge1-xSnx layers epitaxially grown on InP(001).

UR - http://www.scopus.com/inward/record.url?scp=85065669442&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85065669442&partnerID=8YFLogxK

U2 - 10.7567/1882-0786/ab1969

DO - 10.7567/1882-0786/ab1969

M3 - Article

AN - SCOPUS:85065669442

VL - 12

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 5

M1 - 051016

ER -