Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process

Kouta Takahashi; Hiroshi Ikenoue; Mitsuo Sakashita; Osamu Nakatsuka; Shigeaki Zaima; Masashi Kurosawa

doi:10.7567/1882-0786/ab1969

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge_1-xSn_x on SiO₂ fabricated by a low thermal budget process

Kouta Takahashi, Hiroshi Ikenoue, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima, Masashi Kurosawa

ギガフォトンNext GLP共同研究部門

研究成果: Contribution to journal › Article

2 引用（Scopus）

抜粋

A thin-film thermoelectric generator composed of p- and n-type poly-Ge_1-xSn_x (x ∼ 0.02) on a Si(001) covered with SiO₂ has been successfully fabricated by low thermal budget processes (under 300 °C) and demonstrated for the first time. Both the crystallization and dopant activation were simultaneously performed using pulsed UV laser irradiation in flowing water. A recorded activation ratio of Sb in the poly-Ge_1-xSn_x enabled a relatively high power factor (9.2 μ Wcm^-1 K^-2 at RT), which is comparable to the counterparts of n-type Ge_1-xSn_x layers epitaxially grown on InP(001).

元の言語	英語
記事番号	051016
ジャーナル	Applied Physics Express
巻	12
発行部数	5
DOI	https://doi.org/10.7567/1882-0786/ab1969
出版物ステータス	出版済み - 5 1 2019

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

文献にアクセス

10.7567/1882-0786/ab1969

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これを引用

Takahashi, K., Ikenoue, H., Sakashita, M., Nakatsuka, O., Zaima, S., & Kurosawa, M. (2019). Operation of thin-film thermoelectric generator of Ge-rich poly-Ge_1-xSn_x on SiO₂ fabricated by a low thermal budget process. Applied Physics Express, 12(5), [051016]. https://doi.org/10.7567/1882-0786/ab1969

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abstract = "A thin-film thermoelectric generator composed of p- and n-type poly-Ge1-xSnx (x ∼ 0.02) on a Si(001) covered with SiO2 has been successfully fabricated by low thermal budget processes (under 300 °C) and demonstrated for the first time. Both the crystallization and dopant activation were simultaneously performed using pulsed UV laser irradiation in flowing water. A recorded activation ratio of Sb in the poly-Ge1-xSnx enabled a relatively high power factor (9.2 μ Wcm-1 K-2 at RT), which is comparable to the counterparts of n-type Ge1-xSnx layers epitaxially grown on InP(001).",

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AU - Sakashita, Mitsuo

AU - Nakatsuka, Osamu

AU - Zaima, Shigeaki

AU - Kurosawa, Masashi

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