Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process

Kouta Takahashi, Hiroshi Ikenoue, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima, Masashi Kurosawa

研究成果: ジャーナルへの寄稿学術誌査読

7 被引用数 (Scopus)

抄録

A thin-film thermoelectric generator composed of p- and n-type poly-Ge1-xSnx (x ∼ 0.02) on a Si(001) covered with SiO2 has been successfully fabricated by low thermal budget processes (under 300 °C) and demonstrated for the first time. Both the crystallization and dopant activation were simultaneously performed using pulsed UV laser irradiation in flowing water. A recorded activation ratio of Sb in the poly-Ge1-xSnx enabled a relatively high power factor (9.2 μ Wcm-1 K-2 at RT), which is comparable to the counterparts of n-type Ge1-xSnx layers epitaxially grown on InP(001).

本文言語英語
論文番号051016
ジャーナルApplied Physics Express
12
5
DOI
出版ステータス出版済み - 5月 1 2019

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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