Optical and electrical properties of layer semiconductor p-GaSe doped with Zn

S. Shigetomi, T. Ikari, H. Nakashima

    研究成果: Contribution to journalArticle査読

    44 被引用数 (Scopus)

    抄録

    Zinc (Zn) is doped into GaSe single crystals grown by the Bridgman technique in a wide range from 0.005 to 0.5 at. % to the stoichiometric melt. Radiative recombination mechanisms have been investigated by using photoluminescence (PL) measurements. The PL spectra in Zn-doped samples at 77 K are dominated by three emission bands at 1.75, 1.63, and 1.27 eV. The 1.63 and 1.27 eV emission bands are enhanced with the increase in the amount of Zn. In addition to the results of Hall effect measurements, it is found that the 1.63 and 1.27 eV emission bands are associated with the acceptor levels at 0.12 and 0.3 eV above the valence band, respectively. For the 1.27 eV emission band, the temperature dependences of the PL intensity, peak energy, and half-width are characterized by the configurational coordinate model.

    本文言語英語
    ページ(範囲)4125-4129
    ページ数5
    ジャーナルJournal of Applied Physics
    74
    6
    DOI
    出版ステータス出版済み - 12 1 1993

    All Science Journal Classification (ASJC) codes

    • 物理学および天文学(全般)

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