Optical charaterization of Ag/Ga composition ratio in AgGaSe2 thin film

Hitoshi Matsuo, Takahiro Tokuda, Kenji Yoshino, Aya Kinoshita, Tetsuo Ikari, Koichi Kakimoto, Satoru Seto

研究成果: ジャーナルへの寄稿会議記事査読

1 被引用数 (Scopus)

抄録

AgGaSe2 thin films, changing the Ag/Ga ratio from 0.4 to 1.5, on glass substrates were successfully grown by vacuum evaporation method. Fundamental absorption bandedges were clearly observed except for Ag/Ga ratios of 0.4 and 1.5 in the optical transmittance spectra at RT. The optical bandgap in-creased with increasing Ag/Ga ratio. This was due to the Bernstein-Moss shifts. Photoluminescence spectrum was strongly observed in the stoichiometric sample in comparison to Ag- and Ga-rich samples. This means that nonradiative re-combination transition was a few in the stoichiometric sample because there were few defects in the samples Two distinct peaks at 1.77 and 1.70 eV were clearly observed in the stoichiometric sample. They were due to bound exciton emis-sion and donor-acceptor pair (DAP) emission, respectively. The DAP emission is due to recombination between Se- and Ga vacancies.

本文言語英語
ページ(範囲)1070-1073
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
6
5
DOI
出版ステータス出版済み - 9月 30 2009
外部発表はい
イベント16th International Conference on Ternary and Multinary Compounds, ICTMC16 - Berlin, ドイツ
継続期間: 9月 15 20089月 19 2008

!!!All Science Journal Classification (ASJC) codes

  • 凝縮系物理学

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