Optimization of growth procedure for silicon oxinitride (Si4O5N3) single-layer on SiC(0001)

Md Kabiruzzaman, Takeshi Nakagawa, Seigi Mizuno

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Optimized growth of Silicon Oxynitride (Si4O5N3) has been obtained in ultrahigh vacuum and growth conditions are confirmed by observing the low-energy electron diffraction (LEED) patterns and Auger electron spectroscopy (AES). All the steps to produce the perfect Si4O5N3 are clarified separately. Specially, initial Si, time for deposition, nitridation and oxidation are crucial points for getting the clear LEED pattern. By observing the LEED patterns and according to the suggestions of previous report to get ideal insulator and SiC interface, we are expecting that the surface is free from the extra-Si or the least amount of Si remains which can be confirmed by scanning tunneling microscopy (STM).

本文言語英語
ホスト出版物のタイトル2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018
出版社Institute of Electrical and Electronics Engineers Inc.
ページ218-221
ページ数4
ISBN(電子版)9781538651612
DOI
出版ステータス出版済み - 2 12 2019
イベントJoint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018 - Kitakyushu, 日本
継続期間: 6 25 20186 28 2018

出版物シリーズ

名前2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018

会議

会議Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018
国/地域日本
CityKitakyushu
Period6/25/186/28/18

All Science Journal Classification (ASJC) codes

  • 信号処理
  • 制御と最適化
  • 人工知能
  • コンピュータ ビジョンおよびパターン認識
  • 情報システム

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