Optimization of the growth conditions of heteroepitaxial GaAs films on caf2/si structures

Hee Chul Lee, Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

研究成果: Contribution to journalArticle査読

9 被引用数 (Scopus)

抄録

Dependences of the crystallinity and surface morphology of GaAs films grown on CaF2/Si structures on such growth parameters as substrate temperature, growth rate and substrate orientation have been investigated. It has been found that GaAs films having both good crystalline quality and smooth surface can be grown on the (111) substrates by decreasing the growth rate and the substrate temperature, while the crystalline quality of the films on the (100) substrates is virtually independent of the growth rate.

本文言語英語
ページ(範囲)L595-L597
ジャーナルJapanese Journal of Applied Physics
25
7
DOI
出版ステータス出版済み - 7 1986
外部発表はい

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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