Optimization of the growth conditions of heteroepitaxial GaAs films on caf2/si structures

Hee Chul Lee, Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

研究成果: ジャーナルへの寄稿記事

9 引用 (Scopus)

抄録

Dependences of the crystallinity and surface morphology of GaAs films grown on CaF2/Si structures on such growth parameters as substrate temperature, growth rate and substrate orientation have been investigated. It has been found that GaAs films having both good crystalline quality and smooth surface can be grown on the (111) substrates by decreasing the growth rate and the substrate temperature, while the crystalline quality of the films on the (100) substrates is virtually independent of the growth rate.

元の言語英語
ページ(範囲)L595-L597
ジャーナルJapanese Journal of Applied Physics
25
発行部数7
DOI
出版物ステータス出版済み - 1 1 1986

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optimization
Substrates
Crystalline materials
Surface morphology
crystallinity
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Optimization of the growth conditions of heteroepitaxial GaAs films on caf2/si structures. / Lee, Hee Chul; Asano, Tanemasa; Ishiwara, Hiroshi; Furukawa, Seijiro.

:: Japanese Journal of Applied Physics, 巻 25, 番号 7, 01.01.1986, p. L595-L597.

研究成果: ジャーナルへの寄稿記事

Lee, Hee Chul ; Asano, Tanemasa ; Ishiwara, Hiroshi ; Furukawa, Seijiro. / Optimization of the growth conditions of heteroepitaxial GaAs films on caf2/si structures. :: Japanese Journal of Applied Physics. 1986 ; 巻 25, 番号 7. pp. L595-L597.
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