Optimum D.C. electric field strength for growth acceleration of thale cress

T. Okumura, S. Iwata, Y. Muramoto, N. Shimizu

研究成果: Contribution to journalConference article査読

3 被引用数 (Scopus)

抄録

We have studied the influence of D.C. electric field on plant growth. Raphanus sativus longipinnatus (daikon radish) and Arabidopsis thaliana (thale cress) were used as sample. Thale cress is widely used as one of the model organisms for studying plant sciences, because its genome has been already sequenced. In the previous paper, we had reported the following results for daikon radish: (a) The application of D.C. electric field improves the seed germination rate. (b) The D.C. electric field increases the length and the weight. (c) The D.C. electric field encourages the consumption of substances which is stored in the seed. The following results had been also reported for thale cress: (d) The D.C. electric field accelerates the seed germination. (e) The D.C. electric field exerts no effect on seed germination when the electric potential of the thale cress is grounded. It is expected that there is an optimum strength of D.C. electric field for plant growth acceleration. As the first step to seek the optimum strength, we adopted 2.5kV/m and 10.0kV/m. Namely, the seeds of thale cress were cultivated under D.C. electric field of 2.5kV/m and 10.0kV/m. As a result, the growth of the sample was more promoted by 10.0kV/m D.C. field than by 2.5kV/m D.C. field.

本文言語英語
論文番号6232623
ページ(範囲)168-171
ページ数4
ジャーナルAnnual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP
DOI
出版ステータス出版済み - 2011
外部発表はい
イベント2011 Annual Report Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2011 - Cancun, メキシコ
継続期間: 10 16 201110 19 2011

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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