抄録
After high-temperature H2 etching, vicinal SiC(0001) surfaces showed periodically ordered nanofacet structures consisting of pairs of (0001) and (112̄n). Here, we found that the characteristic ordering distance of ∼10nm is independent of the vicinal angle (4°-8°off). However, fluctuation in the ordering distance is dependent on the vicinal angle. The 5.7°off surface showed superior periodicity. The classical elastic theory of a surface predicted the characteristic (constant) ordering distance but not the fluctuation in ordering periodicity. By introducing "quantized step bunching" due to periodic surface energy, which is unique to polymorphic SiC, the fluctuation is described.
| 元の言語 | 英語 |
|---|---|
| 記事番号 | 016102 |
| ジャーナル | Physical Review Letters |
| 巻 | 99 |
| 発行部数 | 1 |
| DOI | |
| 出版物ステータス | 出版済み - 7 5 2007 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
これを引用
Ordering distance of surface nanofacets on vicinal 4H-SiC(0001). / Fujii, Masahiro; Satoru, Tanaka.
：: Physical Review Letters, 巻 99, 番号 1, 016102, 05.07.2007.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Ordering distance of surface nanofacets on vicinal 4H-SiC(0001)
AU - Fujii, Masahiro
AU - Satoru, Tanaka
PY - 2007/7/5
Y1 - 2007/7/5
N2 - After high-temperature H2 etching, vicinal SiC(0001) surfaces showed periodically ordered nanofacet structures consisting of pairs of (0001) and (112̄n). Here, we found that the characteristic ordering distance of ∼10nm is independent of the vicinal angle (4°-8°off). However, fluctuation in the ordering distance is dependent on the vicinal angle. The 5.7°off surface showed superior periodicity. The classical elastic theory of a surface predicted the characteristic (constant) ordering distance but not the fluctuation in ordering periodicity. By introducing "quantized step bunching" due to periodic surface energy, which is unique to polymorphic SiC, the fluctuation is described.
AB - After high-temperature H2 etching, vicinal SiC(0001) surfaces showed periodically ordered nanofacet structures consisting of pairs of (0001) and (112̄n). Here, we found that the characteristic ordering distance of ∼10nm is independent of the vicinal angle (4°-8°off). However, fluctuation in the ordering distance is dependent on the vicinal angle. The 5.7°off surface showed superior periodicity. The classical elastic theory of a surface predicted the characteristic (constant) ordering distance but not the fluctuation in ordering periodicity. By introducing "quantized step bunching" due to periodic surface energy, which is unique to polymorphic SiC, the fluctuation is described.
UR - http://www.scopus.com/inward/record.url?scp=34547474234&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547474234&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.99.016102
DO - 10.1103/PhysRevLett.99.016102
M3 - Article
VL - 99
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 1
M1 - 016102
ER -