Ordering distance of surface nanofacets on vicinal 4H-SiC(0001)

Masahiro Fujii, Tanaka Satoru

研究成果: ジャーナルへの寄稿記事

31 引用 (Scopus)

抄録

After high-temperature H2 etching, vicinal SiC(0001) surfaces showed periodically ordered nanofacet structures consisting of pairs of (0001) and (112̄n). Here, we found that the characteristic ordering distance of ∼10nm is independent of the vicinal angle (4°-8°off). However, fluctuation in the ordering distance is dependent on the vicinal angle. The 5.7°off surface showed superior periodicity. The classical elastic theory of a surface predicted the characteristic (constant) ordering distance but not the fluctuation in ordering periodicity. By introducing "quantized step bunching" due to periodic surface energy, which is unique to polymorphic SiC, the fluctuation is described.

元の言語英語
記事番号016102
ジャーナルPhysical Review Letters
99
発行部数1
DOI
出版物ステータス出版済み - 7 5 2007

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periodic variations
bunching
surface energy
etching

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

これを引用

Ordering distance of surface nanofacets on vicinal 4H-SiC(0001). / Fujii, Masahiro; Satoru, Tanaka.

:: Physical Review Letters, 巻 99, 番号 1, 016102, 05.07.2007.

研究成果: ジャーナルへの寄稿記事

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