We have succeeded in fabricating a novel thin-film electroluminescent device with a luminescent hole transport layer as an emitter. The cell structure is composed of an indium-tin-oxide substrate, a luminescent hole transport layer (emitter), an electron transport layer, and a MgAg electrode. The most essential feature of our device owes for adoption of an oxadiazole derivative as an electron transport layer. The emission intensity of 1000 cd/m2 was achieved at a current of 100 mA/cm2.
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