Organic field effect transistor characteristics of bis (styryl) anthracene analogues

Kenii Mochida; Misuzu Konishi; Katsuhiko Fujita; Tetsuo Tsutsui

Organic field effect transistor characteristics of bis (styryl) anthracene analogues

Kenii Mochida, Misuzu Konishi, Katsuhiko Fujita, Tetsuo Tsutsui

先端素子材料部門

研究成果: 会議への寄与タイプ › 学会誌 › 査読

抄録

Bisstyrylanthracene derivatives with long alkyl side chains(BSA) can give thin films composed of giant anisotropic domains by simple melt process. However the large ionization potential of (5.76eV) causes low carrier mobility due to the high hole injection barrier from Au electrode. We synthesized BSA analogues which have various heterocyclic substituents (Fig.2) to reduce barrier and fabricated organic FET devices by vacuum deposition (Fig.la). It has been found that BBTVA has smaller ionization potentials of 5.50eV and faster carrier mobility of 2.0 × 10^-5(cm²/Vs) than BSA.

本文言語	英語
ページ	1373
ページ数	1
出版ステータス	出版済み - 2006
イベント	55th SPSJ Annual Meeting - Nagoya, 日本継続期間: 5月 24 2006 → 5月 26 2006

その他

その他	55th SPSJ Annual Meeting
国/地域	日本
City	Nagoya
Period	5/24/06 → 5/26/06

!!!All Science Journal Classification (ASJC) codes

工学（全般）

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title = "Organic field effect transistor characteristics of bis (styryl) anthracene analogues",

abstract = "Bisstyrylanthracene derivatives with long alkyl side chains(BSA) can give thin films composed of giant anisotropic domains by simple melt process. However the large ionization potential of (5.76eV) causes low carrier mobility due to the high hole injection barrier from Au electrode. We synthesized BSA analogues which have various heterocyclic substituents (Fig.2) to reduce barrier and fabricated organic FET devices by vacuum deposition (Fig.la). It has been found that BBTVA has smaller ionization potentials of 5.50eV and faster carrier mobility of 2.0 × 10-5(cm2/Vs) than BSA.",

author = "Kenii Mochida and Misuzu Konishi and Katsuhiko Fujita and Tetsuo Tsutsui",

year = "2006",

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T1 - Organic field effect transistor characteristics of bis (styryl) anthracene analogues

AU - Mochida, Kenii

AU - Konishi, Misuzu

AU - Fujita, Katsuhiko

AU - Tsutsui, Tetsuo

PY - 2006

Y1 - 2006

N2 - Bisstyrylanthracene derivatives with long alkyl side chains(BSA) can give thin films composed of giant anisotropic domains by simple melt process. However the large ionization potential of (5.76eV) causes low carrier mobility due to the high hole injection barrier from Au electrode. We synthesized BSA analogues which have various heterocyclic substituents (Fig.2) to reduce barrier and fabricated organic FET devices by vacuum deposition (Fig.la). It has been found that BBTVA has smaller ionization potentials of 5.50eV and faster carrier mobility of 2.0 × 10-5(cm2/Vs) than BSA.

AB - Bisstyrylanthracene derivatives with long alkyl side chains(BSA) can give thin films composed of giant anisotropic domains by simple melt process. However the large ionization potential of (5.76eV) causes low carrier mobility due to the high hole injection barrier from Au electrode. We synthesized BSA analogues which have various heterocyclic substituents (Fig.2) to reduce barrier and fabricated organic FET devices by vacuum deposition (Fig.la). It has been found that BBTVA has smaller ionization potentials of 5.50eV and faster carrier mobility of 2.0 × 10-5(cm2/Vs) than BSA.

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T2 - 55th SPSJ Annual Meeting

Y2 - 24 May 2006 through 26 May 2006

ER -

Organic field effect transistor characteristics of bis (styryl) anthracene analogues

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!!!All Science Journal Classification (ASJC) codes

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