Bisstyrylanthracene derivatives with long alkyl side chains(BSA) can give thin films composed of giant anisotropic domains by simple melt process. However the large ionization potential of (5.76eV) causes low carrier mobility due to the high hole injection barrier from Au electrode. We synthesized BSA analogues which have various heterocyclic substituents (Fig.2) to reduce barrier and fabricated organic FET devices by vacuum deposition (Fig.la). It has been found that BBTVA has smaller ionization potentials of 5.50eV and faster carrier mobility of 2.0 × 10-5(cm2/Vs) than BSA.
|出版ステータス||出版済み - 2006|
|イベント||55th SPSJ Annual Meeting - Nagoya, 日本|
継続期間: 5 24 2006 → 5 26 2006
|その他||55th SPSJ Annual Meeting|
|Period||5/24/06 → 5/26/06|
All Science Journal Classification (ASJC) codes