Organic-Inorganic Field Effect Transistor with SnI-based Perovskite Channel Layer using Vapor Phase Deposition Technique

Toshinori Matsushima, Takeshi Yasuda, Katsuhiko Fujita, Tetsuo Tsutsui

研究成果: ジャーナルへの寄稿会議記事査読

4 被引用数 (Scopus)


High field-effect hole mobility of 0.28 cm2/V.s (on/off ratio is more than 105, and threshold voltage is -3.2 V) in organic-inorganic layered perovskite film (C6H5C2H 4NH3)2SnI4 prepared by a vapor phase deposition technique have been demonstrated through the octadecyltrichlorosilane treatment of substrate. Previously, the (C 6H5C2H4NH3) 2PbI4 films prepared on the octadecyltrichlorosilane- covered substrates using a vapor evaporation showed not only intense exciton absorption and photoluminescence in the optical spectroscopy but also excellent crystallinity and large grain structure in X-ray and atomic force microscopic studies. Especially, the (C6H5C2H 4NH3)2PbI4 structure in the region below few nm closed to the surface of octadecyltrichlorosilane monolayer was drastically improved in comparison with that on the non-covered substrate. Though our initial (C6H5C2H4NH 3)2SnI4 films via a same sequence of preparation of (C6H5C2H4NH 3)2PbI4 and octadecyltrichlorosilane monolayer did not show the field-effect properties because of a lack of spectral, structural, and morphological features. The unformation of favorable (C 6H5C2H4NH3) 2SnI4 structure in the very thin region, that is very important for the field-effect transistors to transport electrons or holes, closed to the surface of non-covered SiO2 dielectric layer was also one of the problems for no observation of them. By adding further optimization and development, such as deposition rate of perovskite, substrate heating during deposition, and tuning device architecture, with hydrophobic treatment, the vacuum-deposited (C6H5C2H4NH 3)2SnI4 have achieved above-described high performance in organic-inorganic hybrid transistors.

ジャーナルProceedings of SPIE - The International Society for Optical Engineering
出版ステータス出版済み - 2003
イベントOrganic Field Effect Transistors II - San Diego, CA, 米国
継続期間: 8月 3 20038月 4 2003

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学


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