Organic-inorganic perovskite field-effect transistors

Toshinori Matsushima, Sunbin Hwang, Atula S.D. Sandanayaka, Chuanjiang Qin, Shinobu Terakawa, Takashi Fujihara, Masayuki Yahiro, Chihaya Adachi

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Organic-inorganic perovskites are extremely promising as the semiconductor for high-performance field-effect transistors because of their solution processability, flexibility, and excellent carrier transport. However, their true performance remains obscured by low perovskite quality, high carrier trap density, and large contact resistance. We fabricated a perovskite layer by spin coating on a substrate treated with a self-assembled monolayer. This surface treatment led to better-developed perovskite films with lower carrier trap density. Additionally, utilizing a top-contact/top-gate structure with hole injection layers was essential for attaining smaller contact resistance and further reducing carrier trap density. By combining these methods, we realized greatly improved hole mobilities of up to 15 cm2 V"1 s"1, which is about six times the previous record hole mobility and also a top-dass value when compared with widely investigated organic transistors. We also demonstrated that this surface treatment leads to a negligible hysteresis.

本文言語英語
ホスト出版物のタイトル23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
出版社Society for Information Display
ページ818-821
ページ数4
ISBN(電子版)9781510845510
出版ステータス出版済み - 2016
イベント23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, 日本
継続期間: 12 7 201612 9 2016

出版物シリーズ

名前23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
2

その他

その他23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
国/地域日本
CityFukuoka
Period12/7/1612/9/16

All Science Journal Classification (ASJC) codes

  • ハードウェアとアーキテクチャ
  • 人間とコンピュータの相互作用
  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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