Orientation control of metalorganic chemical vapor deposition-Bi4Ti3O12 thin film by sequential source gas supply method

Takayuki Watanabe, Hiroshi Funakubo

研究成果: Contribution to journalArticle査読

29 被引用数 (Scopus)

抄録

C-axis-oriented Bi4Ti3O12 thin films were prepared on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) using a sequential source gas supply method taking account of the crystal structure of Bi4Ti3O12 along the c-axis. The X-ray diffraction intensities of Bi4Ti3O12(006) and Bi4Ti3O12(117) increased and decreased, respectively, by the sequential source gas supply method and the conventional continuous source gas supply method. The sequential source gas supply method started from Bi double pulses as effective for the preparation of the c-axis-oriented Bi4Ti3O12 film, and the supply corresponding to a half unit cell per sequence showed high c-axis orientation.

本文言語英語
ページ(範囲)5211-5216
ページ数6
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
39
9 A
DOI
出版ステータス出版済み - 9 2000
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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