Orientation controlled GaSb nanowires: From growth to application

Zaixing Yang, Johnny C. Ho

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

In recent years, high-mobility GaSb nanowires have received tremendous attention for high-performance p-type transistors; however, due to the difficulty in achieving thin, uniform and orientation-controlled nanowires (NWs), there is limited report until now addressing their orientation-dependent properties in this important one-dimensional material system, where all these are essential information for the deployment of GaSb NWs in various applications. Using CMOS-compatible Pd catalysts, we demonstrated the formation of high-mobility 〈111〉 -oriented GaSb nanowires (NWs) via vapor-solid-solid (VSS) growth by the newly developed surfactant-assisted chemical vapor deposition through a complementary experimental and theoretical approach. In contrast to NWs formed by the conventional vapor-liquid-solid (VLS) mechanism, cylindrical-shaped Pd 5 Ga 4 catalytic seeds were present in our Pd-catalyzed VSS-NWs. As solid catalysts, stoichiometric Pd 5 Ga 4 was found to have the lowest crystal surface energy and thus giving rise to a minimal surface diffusion as well as an optimal in-plane interface orientation at the seed/NW interface for efficient epitaxial NW nucleation. Over 95% high crystalline quality NWs were grown in 〈111〉 orientation for a wide diameter range of between 10 and 70 nm. Back-gated field-effect transistors (FETs) fabricated using the Pd-catalyzed GaSb NWs exhibit a superior peak hole mobility of 330 cm 2 V -1 s -1 , close to the mobility limit for a NW channel diameter of 30 nm with a free carrier concentration of 10 18 cm -3 . This suggests that the NWs have excellent homogeneity in phase purity, growth orientation, surface morphology and electrical characteristics. Contact printing process was also used to fabricate large-scale assembly of Pd-catalyzed GaSb NW parallel arrays, confirming the potential constructions and applications of these high-performance electronic devices.

本文言語英語
ホスト出版物のタイトル2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
編集者Ting-Ao Tang, Fan Ye, Yu-Long Jiang
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781538644409
DOI
出版ステータス出版済み - 12 5 2018
外部発表はい
イベント14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Qingdao, 中国
継続期間: 10 31 201811 3 2018

出版物シリーズ

名前2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

会議

会議14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
国/地域中国
CityQingdao
Period10/31/1811/3/18

All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学

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