Orientation dependency of dislocation generation in Si growth process

Karolin Jiptner, Yoshiji Miyamura, Bing Gao, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 引用 (Scopus)

抜粋

In an attempt to understand how and where dislocations are introduced into Si ingots bytemperature gradients, bulk dislocation-free FZ crystals are exposed to temperature gradients similar tothose in Bridgman Si crystal growth. This heat treatment introduces dislocations, which were analyzedusing X-ray topography (XRT) and Scanning InfraRedPolariscopy (SIRP). Hereby, the orientationdependency is taken into account and ingots in (001) and (111) growth orientation are evaluated inthis work. It can be found that the dislocation generation takes place at similar regions of the crystaland is independent of orientation, however, their propagation and multiplication differs. This leads toan overall different shape of the dislocation network. Especially intriguing are the long slip lines inthe (111)-crystal, which cannot be found in the (001)-crystal. This suggests a different magnitude ofslip propagation depending on the sample orientation. This effect should be explained by a differentactivation of slip systems and is discussed in the paper.

元の言語英語
ホスト出版物のタイトルGettering and Defect Engineering in Semiconductor Technology XVI
編集者Peter Pichler, Peter Pichler
出版者Trans Tech Publications Ltd
ページ15-20
ページ数6
ISBN(印刷物)9783038356080
DOI
出版物ステータス出版済み - 1 1 2016
イベント16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015 - Bad Staffelstein, ドイツ
継続期間: 9 20 20159 25 2015

出版物シリーズ

名前Solid State Phenomena
242
ISSN(印刷物)1012-0394
ISSN(電子版)1662-9779

その他

その他16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015
ドイツ
Bad Staffelstein
期間9/20/159/25/15

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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  • これを引用

    Jiptner, K., Miyamura, Y., Gao, B., Harada, H., Kakimoto, K., & Sekiguchi, T. (2016). Orientation dependency of dislocation generation in Si growth process. : P. Pichler, & P. Pichler (版), Gettering and Defect Engineering in Semiconductor Technology XVI (pp. 15-20). (Solid State Phenomena; 巻数 242). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.242.15