Origin of recombination activity of non-coherent Σ3{111} grain boundaries with a positive deviation in the tilt angle in cast-grown silicon ingots

Yutaka Ohno, Takehiro Tamaoka, Hideto Yoshida, Yasuo Shimizu, Kentaro Kutsukake, Yasuyoshi Nagai, Noritaka Usami

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

Non-coherent Σ3{111} grain boundaries (GBs) with a positive deviation in the tilt angle (θ 110 > 70.5°) exhibit a high recombination activity in high-performance multicrystalline silicon ingots. Most of the GB segments are composed of edge-type dislocations with the Burgers vector b of a/3111, unlike Lomer dislocations with b = a/2110 observed for negative deviations, arranged on coherent Σ3{111} GB segments. Stretched 110 reconstructed bonds along the tilt axis are introduced so as not to form dangling bonds, and large strains are generated around the dislocation cores. Oxygen and carbon atoms segregating due to the strains would induce the recombination activity.

本文言語英語
論文番号011002
ジャーナルApplied Physics Express
14
1
DOI
出版ステータス出版済み - 2021

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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