Over 12000 A/cm2 and 3.2 mΩcm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET

Masayuki Iwataki, Nobutaka Oi, Kiyotaka Horikawa, Shotaro Amano, Jun Nishimura, Taisuke Kageura, Masafumi Inaba, Atsushi Hiraiwa, Hiroshi Kawarada

研究成果: Contribution to journalArticle

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We present a miniaturized vertical-type two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) by adopting a gate-source overlapping structure. We developed a 2μm-wide trench and disposed a part of the gate electrode to overlap the Al2O3 insulator film on the source electrode to eliminate the space between source and gate electrode. We obtained the maximum drain current density of ID =12800 A/cm2 at VDS =-50 V and the specific on-resistance of RON =3.2 m}Ω cm2 at VDS =-10 V and confirmed their improvement by the miniaturization of devices and reduction of source to gate resistance. In addition, the drain current on/off ratio was 7 orders magnitude even at 200 °C with the formation of a highly concentrated, thick nitrogen-doped layer as the current blocking layer.

元の言語英語
記事番号8902031
ページ(範囲)111-114
ページ数4
ジャーナルIEEE Electron Device Letters
41
発行部数1
DOI
出版物ステータス出版済み - 1 2020

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

フィンガープリント Over 12000 A/cm<sup>2</sup> and 3.2 mΩcm<sup>2</sup> Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

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    Iwataki, M., Oi, N., Horikawa, K., Amano, S., Nishimura, J., Kageura, T., Inaba, M., Hiraiwa, A., & Kawarada, H. (2020). Over 12000 A/cm2 and 3.2 mΩcm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET. IEEE Electron Device Letters, 41(1), 111-114. [8902031]. https://doi.org/10.1109/LED.2019.2953693