Over l000V semi-superjunction MOSFET with ultra-low on-resistance blow the Si-limit

Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Hironori Yoshioka, Tsuneo Ogura

研究成果: Contribution to journalConference article査読

14 被引用数 (Scopus)

抄録

Si-MOSFETs with the breakdown voltage of over 1000 V were demonstrated, for the first time, realizing low on-resistance below the theoretical Si-limit. The fabricated MOSFETs have Semi-Superjunction (SemiSJ) structure, which is the combination of superjunction (SJ) structure and n-Bottom Assisted Layer (BAL). The SemiSJ MOSFETs realize both the high breakdown voltage of 1100 and 1400 V and the low on-resistance of 54 and 163 mΩcm2, respectively. The fabrication process for the high voltage SemiSJ-MOSFET was completely equivalent to a 600-V class SJ-MOSFET process, which implies that a single optimized process for forming SJ structure for 600 V-class MOSFET can be used for a wide voltage range extending up to 1200 V MOSFET. These results show the possibility of new Si Power-MOSFET with higher application voltage range.

本文言語英語
論文番号HV1-1
ページ(範囲)27-30
ページ数4
ジャーナルProceedings of the International Symposium on Power Semiconductor Devices and ICs
出版ステータス出版済み - 11 22 2005
外部発表はい
イベント17th International Symposium on Power Semiconductor Devices and ICs, ISPSD'05 - Sanata Barbara, CA, 米国
継続期間: 5 23 20055 26 2005

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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