Oxide nanowires for nonvolatile memory applications

K. Nagashima, T. Yanagida

研究成果: Chapter in Book/Report/Conference proceedingChapter

2 被引用数 (Scopus)

抄録

Nanowires provide unique tools for scaling down in semiconductor electronics and the fundamental understanding of nanoscale physical phenomena, which are not accessible in conventional lithography. Resistive random access memory (ReRAM) is an emergent concept in nonvolatile memory to overcome the limitations of flash memory technology; however, its potential scalability and the fundamental nanoscale mechanism have been controversial. This chapter reviews oxide nanowire-based ReRAM. The oxide nanowire allows for ultrasmall device architecture such as a segmented memory cell in a single nanowire and a cross-bar memory cell at a nanowire junction. Furthermore, the nanoscale physical mechanisms of ReRAM are directly extracted by the confined space of the oxide nanowire. First, the memory performance of oxide nanowire ReRAM, including their cell sizes, is discussed, and later, the detailed mechanism, the challenging issues, and the application field of oxide nanowire ReRAM are discussed.

本文言語英語
ホスト出版物のタイトルMagnetic Nano- and Microwires
ホスト出版物のサブタイトルDesign, Synthesis, Properties and Applications
出版社Elsevier
ページ489-524
ページ数36
ISBN(印刷版)9780081001646
DOI
出版ステータス出版済み - 5 28 2015
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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