TY - GEN
T1 - Oxygen diffusion in rare-earth doped BaTiO3 ceramics
AU - Sakaguchi, Isao
AU - Hirose, Sakyo
AU - Furuta, Tomohiro
AU - Watanabe, Ken
AU - Kageyama, Keisuke
AU - Hishita, Shunichi
AU - Haneda, Hajime
AU - Ohashi, Naoki
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2014
Y1 - 2014
N2 - The effect of the surface preparation in samarium doped semiconducting barium titanate [(Ba1-xSmx)TiO3] ceramics with (Ba, Sm)/Ti ratio of 1.000 was studied by means of isotope tracer technique using a secondary ion mass spectrometer. The surfaces of specimens were prepared with the chemical mechanical polishing (CMP) with colloidal silica slurry or the mechanical polishing (MP) with diamond paste. The oxygen diffusion coefficients obtained in the CMP samples were small compared to those in the mechanical polished samples. This fact suggests that the surface prepared with CMP has less oxygen defect concentration. Moreover, it was also indicated that high temperature treatment over 1000 °C is required for annihilation of defects formed by MP. The oxygen diffusion study used CMP sample brings the useful information on the oxygen defect chemistry in Sm doped BaTiO3.
AB - The effect of the surface preparation in samarium doped semiconducting barium titanate [(Ba1-xSmx)TiO3] ceramics with (Ba, Sm)/Ti ratio of 1.000 was studied by means of isotope tracer technique using a secondary ion mass spectrometer. The surfaces of specimens were prepared with the chemical mechanical polishing (CMP) with colloidal silica slurry or the mechanical polishing (MP) with diamond paste. The oxygen diffusion coefficients obtained in the CMP samples were small compared to those in the mechanical polished samples. This fact suggests that the surface prepared with CMP has less oxygen defect concentration. Moreover, it was also indicated that high temperature treatment over 1000 °C is required for annihilation of defects formed by MP. The oxygen diffusion study used CMP sample brings the useful information on the oxygen defect chemistry in Sm doped BaTiO3.
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U2 - 10.4028/www.scientific.net/KEM.582.189
DO - 10.4028/www.scientific.net/KEM.582.189
M3 - Conference contribution
AN - SCOPUS:84885925858
SN - 9783037858561
T3 - Key Engineering Materials
SP - 189
EP - 193
BT - Electroceramics in Japan XVI
PB - Trans Tech Publications Ltd
T2 - 32nd Electronics Division Meeting of the Ceramic Society of Japan
Y2 - 26 October 2012 through 27 October 2012
ER -