Oxygen distribution at a solid-liquid interface of silicon under transverse magnetic fields

K. Kakimoto, H. Ozoe

研究成果: ジャーナルへの寄稿学術誌査読

42 被引用数 (Scopus)

抄録

This paper aims to report the effect of transverse magnetic fields on melt convection and oxygen transfers in silicon melt during single-crystal growth. Three-dimensional and time-dependent calculation was carried out to clarify distributions of velocity, temperature and oxygen in the melt. Asymmetric temperature and oxygen distributions were obtained from the calculation, which were due to unidirectional magnetic fields. Oxygen distribution in the melt was also discussed to clarify how surface-tension-driven flow affect the oxygen distribution at an interface between crystals and melt.

本文言語英語
ページ(範囲)429-437
ページ数9
ジャーナルJournal of Crystal Growth
212
3
DOI
出版ステータス出版済み - 5月 2000

!!!All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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