Oxygen-isotope-doped silicon crystals grown by a floating zone method

Koichi Kakimoto, Katsuto Tanahashi, Hiroshi Yamada-Kaneta, Tohru Nagasawa

研究成果: ジャーナルへの寄稿記事

抄録

We have grown silicon single crystals doped with isotope oxygen of 18O by using a floating zone method with two ellipsoid mirrors. Two lamps through a quartz tube heated the crystal for melting during crystal growth. The isotope oxygen of 18O was doped from the gas phase with argon gas during crystal growth. The isotope of 18O was detected by using Fourier transformation of infrared (FTIR) spectroscopy at room temperature. We succeed in the doping of the isotope of 18O from the gas phase through a liquid-gas interface.

元の言語英語
ページ(範囲)310-312
ページ数3
ジャーナルJournal of Crystal Growth
304
発行部数2
DOI
出版物ステータス出版済み - 6 15 2007

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Oxygen Isotopes
oxygen isotopes
Silicon
floating
Isotopes
crystal growth
isotopes
Gases
vapor phases
Crystals
Oxygen
Fourier transformation
silicon
ellipsoids
Crystallization
gases
Crystal growth
luminaires
crystals
quartz

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

これを引用

Oxygen-isotope-doped silicon crystals grown by a floating zone method. / Kakimoto, Koichi; Tanahashi, Katsuto; Yamada-Kaneta, Hiroshi; Nagasawa, Tohru.

:: Journal of Crystal Growth, 巻 304, 番号 2, 15.06.2007, p. 310-312.

研究成果: ジャーナルへの寄稿記事

Kakimoto, Koichi ; Tanahashi, Katsuto ; Yamada-Kaneta, Hiroshi ; Nagasawa, Tohru. / Oxygen-isotope-doped silicon crystals grown by a floating zone method. :: Journal of Crystal Growth. 2007 ; 巻 304, 番号 2. pp. 310-312.
@article{a0acb9c997e04854acd110f5ccbae236,
title = "Oxygen-isotope-doped silicon crystals grown by a floating zone method",
abstract = "We have grown silicon single crystals doped with isotope oxygen of 18O by using a floating zone method with two ellipsoid mirrors. Two lamps through a quartz tube heated the crystal for melting during crystal growth. The isotope oxygen of 18O was doped from the gas phase with argon gas during crystal growth. The isotope of 18O was detected by using Fourier transformation of infrared (FTIR) spectroscopy at room temperature. We succeed in the doping of the isotope of 18O from the gas phase through a liquid-gas interface.",
author = "Koichi Kakimoto and Katsuto Tanahashi and Hiroshi Yamada-Kaneta and Tohru Nagasawa",
year = "2007",
month = "6",
day = "15",
doi = "10.1016/j.jcrysgro.2007.03.015",
language = "English",
volume = "304",
pages = "310--312",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "2",

}

TY - JOUR

T1 - Oxygen-isotope-doped silicon crystals grown by a floating zone method

AU - Kakimoto, Koichi

AU - Tanahashi, Katsuto

AU - Yamada-Kaneta, Hiroshi

AU - Nagasawa, Tohru

PY - 2007/6/15

Y1 - 2007/6/15

N2 - We have grown silicon single crystals doped with isotope oxygen of 18O by using a floating zone method with two ellipsoid mirrors. Two lamps through a quartz tube heated the crystal for melting during crystal growth. The isotope oxygen of 18O was doped from the gas phase with argon gas during crystal growth. The isotope of 18O was detected by using Fourier transformation of infrared (FTIR) spectroscopy at room temperature. We succeed in the doping of the isotope of 18O from the gas phase through a liquid-gas interface.

AB - We have grown silicon single crystals doped with isotope oxygen of 18O by using a floating zone method with two ellipsoid mirrors. Two lamps through a quartz tube heated the crystal for melting during crystal growth. The isotope oxygen of 18O was doped from the gas phase with argon gas during crystal growth. The isotope of 18O was detected by using Fourier transformation of infrared (FTIR) spectroscopy at room temperature. We succeed in the doping of the isotope of 18O from the gas phase through a liquid-gas interface.

UR - http://www.scopus.com/inward/record.url?scp=34248525168&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34248525168&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2007.03.015

DO - 10.1016/j.jcrysgro.2007.03.015

M3 - Article

AN - SCOPUS:34248525168

VL - 304

SP - 310

EP - 312

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 2

ER -