Oxygen post-annealing effects on critical current properties of PLD-ErBa2Cu3Oy films grown at several substrate temperatures

S. Horii, M. Mukaida, Y. Ichino, K. Matsumoto, T. Ohazama, A. Ichinose, Y. Yoshida, J. Shimoyama, K. Kishio

研究成果: Contribution to journalConference article査読

6 被引用数 (Scopus)


We report the effects of oxygen post-annealing on critical current properties and normal state resistivities in ErBa2Cu 3Oy/SrTiO3(Er123/STO) thin films fabricated in the substrate temperature range from 720 °C to 780 °C by pulsed laser deposition (PLD). Interestingly, for films fabricated below 760 °C, the critical current density (Jc) increased by oxygen post-annealing process from 0.3-0.6 × 106 A cm-2 to the order of 106 A cm-2 for the as-deposited films despite critical temperatures (Tc) of ∼90 K for both annealed and as-deposited films. In the 780 °C-deposited film, Jc was not obviously enhanced. X-ray diffraction and measurement of normal state resistivities revealed that the PLD-Er123/STO films showed high-quality crystallographic and electrical properties in films deposited below 760 °C. In high temperature resistivity measurements, the resistivity reduced with annealing time and showed a systematic change with changing oxygen partial pressure. These results strongly suggest that oxygen post-annealing is indispensable for improving Jc in 123 films fabricated through a non-equilibrium process such as the PLD method even though the as-deposited films show a Tc value of ∼90 K.

ジャーナルPhysica C: Superconductivity and its applications
出版ステータス出版済み - 10 7 2005
イベントProceedings of the 17th Internatioanl Symposium on Superconductivity (ISS 2004) Advances in Superconductivity -
継続期間: 11 23 200411 25 2004

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • エネルギー工学および電力技術
  • 電子工学および電気工学


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