Oxygen transport mechanism in Si melt during single crystal growth in the Czochralski system

Kyung Woo Yi, Koichi Kakimoto, Minoru Eguchi, Hiroshi Noguchi

研究成果: ジャーナルへの寄稿記事

21 引用 (Scopus)

抜粋

Silicon single crystals were grown in crucibles with and without a carbon sheet at the bottom to investigate how oxygen dissociates from the crucible and transfers to the crystals. Oxygen concentration in the crystals grown in the sheet-attached crucible was lower than that of crystals grown in the sheetless crucible when crucible rotation rate was high. A three-dimensional numerical simulation clarified that with a high crucible rotation rate, about 20% of the oxygen in the grown crystals was transferred by convection in the melt from the bottom of the crucible. For a low crucible rotation rate, a melt with a small oxygen concentration was directly transferred from the gas-melt interface to the crystal-melt interface; therefore, oxygen concentration in crystals grown at a low crucible rotation rate was lower than that for crystals grown at a high rotation rate.

元の言語英語
ページ(範囲)358-361
ページ数4
ジャーナルJournal of Crystal Growth
165
発行部数4
DOI
出版物ステータス出版済み - 8 1996
外部発表Yes

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

これを引用