p- and n-Type Ba8Ga16Ge30 studied by X-ray photoelectron spectroscopy

Jun Tang, Ryotaro Kumashiro, Jing Ju, Zhaofei Li, Marcos A. Avila, Kouichirou Suekuni, Toshiro Takabatake, Fangzhun Guo, Keisuke Kobayashi, Katsumi Tanigaki

研究成果: Contribution to journalArticle査読

17 被引用数 (Scopus)

抄録

The electronic properties of p- and n-type Ba8Ga16Ge30 (BGG) are studied using soft X-ray photoelectron spectroscopy at a high-energy facility. Three bands are resolved in the valence band region. The first band for n-type BGG is sensitive to temperature, while the second band is sensitive for p-type BGG. The change in the ratio of Ba to Ga, from which the carrier type is controlled in this system, modifies the positions of Ga residing at the larger (Ga-CGe)24 cage. This modification in the host network is responsible for the large differences observed in electronic properties of p- and n-BGGs in this clathrate family.

本文言語英語
ページ(範囲)60-64
ページ数5
ジャーナルChemical Physics Letters
472
1-3
DOI
出版ステータス出版済み - 4 6 2009
外部発表はい

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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