P-i-n homojunction in organic light-emitting transistors

Satria Zulkarnaen Bisri, Taishi Takenobu, Kosuke Sawabe, Satoshi Tsuda, Yohei Yomogida, Takeshi Yamao, Shu Hotta, Chihaya Adachi, Yoshihiro Iwasa

研究成果: Contribution to journalArticle査読

65 被引用数 (Scopus)

抄録

A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETs) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously indicates that the light emission comes from the electric-field-induced p-i-n homojunction in ambipolar LETs.

本文言語英語
ページ(範囲)2753-2758
ページ数6
ジャーナルAdvanced Materials
23
24
DOI
出版ステータス出版済み - 6 24 2011

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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