P-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition and their application to photodetectors

Shinya Ohmagari, Tsuyoshi Yoshitake

    研究成果: ジャーナルへの寄稿学術誌査読

    14 被引用数 (Scopus)

    抄録

    p-Type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were fabricated by pulsed laser deposition with boron-blended graphite targets. The X-ray diffraction patterns exhibited diffraction peaks attributable to diamond-111 and diamond-200. Electrical conductivity clearly increased with boron content. The near-edge X-ray absorption fine structure revealed that doped boron atoms partially replace hydrogen atoms that terminate the dangling bonds of UNCD grains. Heterojunction diodes comprising p-type UNCD/a-C:H and ntype Si showed a strong photoresponse that originates from UNCD grains in the wavelength range between 200 and 280 nm. We experimentally proved that boron-doped UNCD/a-C:H is a new promising p-type semiconductor for photodetection.

    本文言語英語
    論文番号090123
    ジャーナルJapanese journal of applied physics
    51
    9
    DOI
    出版ステータス出版済み - 9月 2012

    !!!All Science Journal Classification (ASJC) codes

    • 工学(全般)
    • 物理学および天文学(全般)

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