Paralleled SiC MOSFETs DC Circuit Breaker with SiC MPS Diode as Avalanche Voltage Clamping

Taro Takamori, Keiji Wada, Wataru Saito, Shinichi Nishizawa

研究成果: 会議への寄与タイプ学会誌査読

抄録

This paper proposes a solid-state DC circuit breaker composed of SiC MOSFETs and a SiC diode, based on the principle of avalanche voltage clamping. To realize a solid-state DC circuit breaker, it is necessary to reduce the conduction loss and increase the breaking capability. A parallel connection of power semiconductor devices is the most suitable configuration that can meet these requirements. However, in such a configuration, the current balance during current interruption may be affected by the difference in the breakdown voltage characteristics of the power semiconductor devices. The proposed solid-state DC circuit breaker is clamped using a SiC merged pin Schottky diode with high avalanche tolerance and robust characteristics under repetitive avalanche events. Experimental results from an unclamped inductive switching test circuit with a 400-V DC distribution system show that the proposed solid-state DC circuit breaker can interrupt currents up to 50-A.

本文言語英語
ページ225-229
ページ数5
DOI
出版ステータス出版済み - 2022
イベント37th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2022 - Houston, 米国
継続期間: 3月 20 20223月 24 2022

会議

会議37th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2022
国/地域米国
CityHouston
Period3/20/223/24/22

!!!All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学

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