Partly three-dimensional calculation of silicon Czochralski growth with a transverse magnetic field

Koichi Kakimoto, Lijun Liu

研究成果: Contribution to journalArticle査読

7 被引用数 (Scopus)

抄録

A three-dimensional (3D) global model is required for investigating temperature distribution in a crystal in a Czochralski (CZ) furnace for silicon crystal growth. We succeeded in constructing a code in which the 3D configuration of the furnace is partly taken into account. Convective, conductive and radiative heat transfer in the furnace are solved simultaneously by a finite control-volume method. The model enables us to carry out 3D global simulations with moderate requirements of computer memory and computation time. Some results obtained by using the partly 3D global model for small silicon CZ growth in a transverse magnetic field are presented. Results for oxygen transfer in the melt of TMCZ are also presented.

本文言語英語
ページ(範囲)135-140
ページ数6
ジャーナルJournal of Crystal Growth
303
1 SPEC. ISS.
DOI
出版ステータス出版済み - 5 1 2007

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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