Passivation of electrically active defects in Ge-Rich SiGe-on-insulator by Al2O3 deposition and subsequent post-deposition annealing

Haigui Yang, Masatoshi Iyota, Shogo Ikeura, Dong Wang, Hiroshi Nakashima

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

抄録

Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) is proposed as an effective method to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates, which were fabricated using Ge condensation. We found that Al 2O3-PDA could not only suppress the surface reaction during Al-PDA, but could also reduce the defect-induced hole concentration in Ge-rich SGOI, which was in the range of 1016-1018 cm -3 before Al2O3-PDA, by approximately one order of magnitude. Al2O3-PDA greatly improves the electrical characteristics of a back-gate metal-oxide-semiconductor field-effect transistor fabricated on Ge-rich SGOI.

元の言語英語
記事番号071302
ジャーナルApplied Physics Express
3
発行部数7
DOI
出版物ステータス出版済み - 7 1 2010

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Passivation
passivity
insulators
Annealing
Defects
annealing
defects
Personal digital assistants
Hole concentration
Surface reactions
MOSFET devices
metal oxide semiconductors
surface reactions
Condensation
field effect transistors
condensation
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Passivation of electrically active defects in Ge-Rich SiGe-on-insulator by Al2O3 deposition and subsequent post-deposition annealing. / Yang, Haigui; Iyota, Masatoshi; Ikeura, Shogo; Wang, Dong; Nakashima, Hiroshi.

:: Applied Physics Express, 巻 3, 番号 7, 071302, 01.07.2010.

研究成果: ジャーナルへの寄稿記事

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AU - Nakashima, Hiroshi

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