Passive alignment and mounting of LiNbO3 waveguide chips on Si substrates by low-temperature solid-state bonding of Au

Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Tetsuya Kawanishi

研究成果: Contribution to journalArticle査読

37 被引用数 (Scopus)

抄録

In this study, passive alignment and mounting of lithium niobate (LiNbO3) chips, with a large mismatch in the coefficient of thermal expansion with most semiconductors, are demonstrated for hybrid-integrated optical devices. LiNbO3 chips were aligned passively using the visual index alignment method and were subsequently bonded on the Si substrates by low-temperature solid-state bonding with Au microbumps, which allow for electrical connections and heat dissipation. Au-Au bonding was carried out at 100 °C in ambient air after surface activation by argon RF plasma. The vertical bonding accuracy was determined by assessing the height variations of the Au microbumps due to the plastic deformation in the bonding process. The bonding accuracies in the horizontal and vertical directions were estimated to be within ±1 μm. Average excess loss due to misalignment between titanium-diffused single-mode LiNbO3 waveguides and V-groove-guided single-mode fibers was about 0.5-dBm per interface (wavelength: 1.55 μm).

本文言語英語
論文番号5713807
ページ(範囲)652-658
ページ数7
ジャーナルIEEE Journal on Selected Topics in Quantum Electronics
17
3
DOI
出版ステータス出版済み - 5 2011
外部発表はい

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

フィンガープリント 「Passive alignment and mounting of LiNbO<sub>3</sub> waveguide chips on Si substrates by low-temperature solid-state bonding of Au」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル