抄録
Gas phase p-doping of InAs nanowires with Zn atoms is demonstrated as an effective route for enabling postgrowth dopant profiling of nanostructures. The versatility of the approach is demonstrated by the fabrication of high-performance gated diodes and p-MOSFETs. High Zn concentrations with electrically active content of ̃1× 1019 cm-3 are achieved which is essential for compensating the electron-rich surface layers of InAs to enable heavily p-doped structures. This work could have important practical implications for the fabrication of planar and nonplanar devices based on InAs and other III-V nanostructures which are not compatible with conventional ion implantation processes that often cause severe lattice damage with local stoichiometry imbalance.
本文言語 | 英語 |
---|---|
ページ(範囲) | 509-513 |
ページ数 | 5 |
ジャーナル | Nano Letters |
巻 | 10 |
号 | 2 |
DOI | |
出版ステータス | 出版済み - 2月 10 2010 |
外部発表 | はい |
!!!All Science Journal Classification (ASJC) codes
- バイオエンジニアリング
- 化学 (全般)
- 材料科学(全般)
- 凝縮系物理学
- 機械工学