Patterned p-doping of InAs nanowires by gas-phase surface diffusion of Zn

Alexandra C. Ford, Steven Chuang, Johnny C. Ho, Yu Lun Chueh, Zhiyong Fan, Ali Javey

研究成果: Contribution to journalArticle査読

46 被引用数 (Scopus)

抄録

Gas phase p-doping of InAs nanowires with Zn atoms is demonstrated as an effective route for enabling postgrowth dopant profiling of nanostructures. The versatility of the approach is demonstrated by the fabrication of high-performance gated diodes and p-MOSFETs. High Zn concentrations with electrically active content of ̃1× 1019 cm-3 are achieved which is essential for compensating the electron-rich surface layers of InAs to enable heavily p-doped structures. This work could have important practical implications for the fabrication of planar and nonplanar devices based on InAs and other III-V nanostructures which are not compatible with conventional ion implantation processes that often cause severe lattice damage with local stoichiometry imbalance.

本文言語英語
ページ(範囲)509-513
ページ数5
ジャーナルNano Letters
10
2
DOI
出版ステータス出版済み - 2 10 2010
外部発表はい

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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