Patterning of CVD diamond films by seeding and their field emission properties

Satoshi Katsumata, Yoshimichi Oobuchi, Tanemasa Asano

研究成果: ジャーナルへの寄稿学術誌査読

15 被引用数 (Scopus)

抄録

Selective seeding for growing diamond on Si substrates was performed by conventional lithography using photoresist mixed with fine diamond particles. The selectivity was improved by filtering the diamond powder-photoresist mixture and carrying out reactive ion etching of patterned substrates. As a result, a selectivity up to 2.0 × 102 or higher was achieved. The resolution was of the order of 1 μm. Field emission from diamonds prepared using this selective growth method was observed without any postgrowth treatment. The measured current vs. voltage plot of a diode showed a rectifying characteristic. Under a forward bias, a current of about 15 μA was obtained at about 570 V, with a turn-on voltage of about 480 V. The emission current was comparable with that which had been observed for Si field emitter tips.

本文言語英語
ページ(範囲)1296-1300
ページ数5
ジャーナルDiamond and Related Materials
3
11-12
DOI
出版ステータス出版済み - 11月 1994

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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