Selective seeding for growing diamond on Si substrates was performed by conventional lithography using photoresist mixed with fine diamond particles. The selectivity was improved by filtering the diamond powder-photoresist mixture and carrying out reactive ion etching of patterned substrates. As a result, a selectivity up to 2.0 × 102 or higher was achieved. The resolution was of the order of 1 μm. Field emission from diamonds prepared using this selective growth method was observed without any postgrowth treatment. The measured current vs. voltage plot of a diode showed a rectifying characteristic. Under a forward bias, a current of about 15 μA was obtained at about 570 V, with a turn-on voltage of about 480 V. The emission current was comparable with that which had been observed for Si field emitter tips.
!!!All Science Journal Classification (ASJC) codes
- 化学 (全般)