Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation

Akihiro Ikeda; Koji Nishi; Hiroshi Ikenoue; Tanemasa Asano

doi:10.1063/1.4790621

Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation

Akihiro Ikeda, Koji Nishi, Hiroshi Ikenoue, Tanemasa Asano

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

21 被引用数 (Scopus)

抄録

Phosphorus doping of 4H SiC is performed by KrF excimer laser irradiation of 4H SiC immersed in phosphoric acid. Phosphorus is incorporated to a depth of a few tens of nanometers at a concentration of over 10²⁰/cm ³ without generating significant crystal defects. Formation of a pn junction diode with an ideality factor of 1.06 is demonstrated.

本文言語	英語
論文番号	052104
ジャーナル	Applied Physics Letters
巻	102
号	5
DOI	https://doi.org/10.1063/1.4790621
出版ステータス	出版済み - 2月 4 2013

!!!All Science Journal Classification (ASJC) codes

物理学および天文学（その他）

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10.1063/1.4790621

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@article{d1191a625d8e4d3aa8663d29913f9e87,

title = "Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation",

abstract = "Phosphorus doping of 4H SiC is performed by KrF excimer laser irradiation of 4H SiC immersed in phosphoric acid. Phosphorus is incorporated to a depth of a few tens of nanometers at a concentration of over 1020/cm 3 without generating significant crystal defects. Formation of a pn junction diode with an ideality factor of 1.06 is demonstrated.",

author = "Akihiro Ikeda and Koji Nishi and Hiroshi Ikenoue and Tanemasa Asano",

year = "2013",

month = feb,

day = "4",

doi = "10.1063/1.4790621",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation

AU - Ikeda, Akihiro

AU - Nishi, Koji

AU - Ikenoue, Hiroshi

AU - Asano, Tanemasa

PY - 2013/2/4

Y1 - 2013/2/4

N2 - Phosphorus doping of 4H SiC is performed by KrF excimer laser irradiation of 4H SiC immersed in phosphoric acid. Phosphorus is incorporated to a depth of a few tens of nanometers at a concentration of over 1020/cm 3 without generating significant crystal defects. Formation of a pn junction diode with an ideality factor of 1.06 is demonstrated.

AB - Phosphorus doping of 4H SiC is performed by KrF excimer laser irradiation of 4H SiC immersed in phosphoric acid. Phosphorus is incorporated to a depth of a few tens of nanometers at a concentration of over 1020/cm 3 without generating significant crystal defects. Formation of a pn junction diode with an ideality factor of 1.06 is demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=84874060568&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84874060568&partnerID=8YFLogxK

U2 - 10.1063/1.4790621

DO - 10.1063/1.4790621

M3 - Article

AN - SCOPUS:84874060568

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 052104

ER -

Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation

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!!!All Science Journal Classification (ASJC) codes

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