Photodetection characteristics of heterojunctions comprising p-type ultrananocrystalline diamond films and n-type Si substrates at low temperatures

Takanori Hanada, Shinya Ohmagari, Abdelrahman Zkria, Nathaporn Promros, Tsuyoshi Yoshitake

研究成果: ジャーナルへの寄稿学術誌査読

1 被引用数 (Scopus)

抄録

0.06 at.% boron-doped p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited on n-type Si substrates by pulsed laser deposition, and the resultant heterojunctions were evaluated as photodiodes in the deep-ultraviolet range. The rectifying action of the heterojunctions were improved accompanied by a reduction in the leakage current with decreasing temperature. The leakage current was decreased by more than three orders of magnitude at 60 K as compared with that at 300 K. Although the detectivity for 254 nm monochromatic light was gradually enhanced with decreasing temperature, the illumination current at reverse voltages was decreased along with the decrease in the leakage current. This might be because a spike due to a heterojunction band offset gets higher in the conduction band at low temperatures and it act as a barrier for photogenerated electrons flowing from the UNCD/a-C:H film to the Si substrate.

本文言語英語
ページ(範囲)3348-3351
ページ数4
ジャーナルJournal of nanoscience and nanotechnology
17
5
DOI
出版ステータス出版済み - 2017

!!!All Science Journal Classification (ASJC) codes

  • バイオエンジニアリング
  • 化学 (全般)
  • 生体医工学
  • 材料科学(全般)
  • 凝縮系物理学

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