Photoenhanced chemical vapor deposition of zinc phosphide

Yoshimine Kato, Shoichi Kurita, Toshikazu Suda

研究成果: Contribution to journalArticle査読

16 被引用数 (Scopus)

抄録

Thin films of zinc, phosphorus, and zinc phosphide (Zn3P 2) have been deposited by photodissociation of dimethylzinc (DMZ) and phosphine (PH3) on various substrates using a low-pressure mercury lamp as a light source. The substrate temperature was varied between room temperature and 250 °C. The deposition rates of the films were significantly affected by the UV light intensity, the density of gases, the PH 3/DMZ molar ratio, and the substrate temperature. Zn 3P2 microcrystallites were grown on Si(111) substrates at a temperature of 250 °C. Those crystallites were studied by using a scanning electron microscope and reflection high-energy electron diffraction. A very weak photoluminescence spectrum at 808 nm (1.53 eV) was observed at room temperature.

本文言語英語
ページ(範囲)3733-3739
ページ数7
ジャーナルJournal of Applied Physics
62
9
DOI
出版ステータス出版済み - 1987
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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