A sparse ZnO nanowire array with aspect ratio of ca. 120 and growth rate of 1 [im/h was synthesized by controlling the density of seeds at the initial stage of nanowire growth. The spatially-separated nanowires were cut off from the growth substrate without breaking, and thus were useful in the construction of a single-nanowire device by photolithography. The device exhibited a linear current-voltage characteristic associated with ohmic contact between ZnO nanowire and electrodes. The device further demonstrated a reliable photoresponse with an Luv/Idark of ~100 to ultraviolet light irradiation.
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