Photoluminescence characterization of strained Si-SiGe-on-insulator wafers

Dong Wang, Koji Matsumoto, Masahiko Nakamae, Hiroshi Nakashima

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

抄録

Photoluminescence (PL) was observed for three strained Si-SiGe-on-insulator wafers with different Ge fractions, which were fabricated using Ge condensation by the dry oxidation of SiGe on a silicon-on-insulator substrate. PL signals were excited by an Ar+ laser operated at 514 nm and a HeCd laser operated at 325 nm. The PL signal excited by the 325 nm line was confirmed to emit only from layers on buried oxide. Under 325 nm line excitation, the PL signals of wafers with 13 and 18% Ge fractions are deep-level-free in the PL energy range from 0.77 eV to the band gap, implying high wafer qualities. However, a broad PL signal could be observed for a wafer with a 25% Ge fraction, which was confirmed to be defect-related by varying laser power. Integrated band-band PL signal intensity decreased with increasing Ge fraction, implying a wafer quality dependence on Ge fraction. The dependence of the PL signal intensity on Ge fraction was discussed in detail.

元の言語英語
ページ(範囲)3012-3016
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
発行部数4 B
DOI
出版物ステータス出版済み - 4 25 2006

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Photoluminescence
insulators
wafers
photoluminescence
Lasers
lasers
Condensation
Energy gap
condensation
Silicon
Oxidation
Defects
oxidation
Oxides
oxides
defects
silicon
Substrates
excitation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Photoluminescence characterization of strained Si-SiGe-on-insulator wafers. / Wang, Dong; Matsumoto, Koji; Nakamae, Masahiko; Nakashima, Hiroshi.

:: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 45, 番号 4 B, 25.04.2006, p. 3012-3016.

研究成果: ジャーナルへの寄稿記事

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abstract = "Photoluminescence (PL) was observed for three strained Si-SiGe-on-insulator wafers with different Ge fractions, which were fabricated using Ge condensation by the dry oxidation of SiGe on a silicon-on-insulator substrate. PL signals were excited by an Ar+ laser operated at 514 nm and a HeCd laser operated at 325 nm. The PL signal excited by the 325 nm line was confirmed to emit only from layers on buried oxide. Under 325 nm line excitation, the PL signals of wafers with 13 and 18{\%} Ge fractions are deep-level-free in the PL energy range from 0.77 eV to the band gap, implying high wafer qualities. However, a broad PL signal could be observed for a wafer with a 25{\%} Ge fraction, which was confirmed to be defect-related by varying laser power. Integrated band-band PL signal intensity decreased with increasing Ge fraction, implying a wafer quality dependence on Ge fraction. The dependence of the PL signal intensity on Ge fraction was discussed in detail.",
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AU - Wang, Dong

AU - Matsumoto, Koji

AU - Nakamae, Masahiko

AU - Nakashima, Hiroshi

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Y1 - 2006/4/25

N2 - Photoluminescence (PL) was observed for three strained Si-SiGe-on-insulator wafers with different Ge fractions, which were fabricated using Ge condensation by the dry oxidation of SiGe on a silicon-on-insulator substrate. PL signals were excited by an Ar+ laser operated at 514 nm and a HeCd laser operated at 325 nm. The PL signal excited by the 325 nm line was confirmed to emit only from layers on buried oxide. Under 325 nm line excitation, the PL signals of wafers with 13 and 18% Ge fractions are deep-level-free in the PL energy range from 0.77 eV to the band gap, implying high wafer qualities. However, a broad PL signal could be observed for a wafer with a 25% Ge fraction, which was confirmed to be defect-related by varying laser power. Integrated band-band PL signal intensity decreased with increasing Ge fraction, implying a wafer quality dependence on Ge fraction. The dependence of the PL signal intensity on Ge fraction was discussed in detail.

AB - Photoluminescence (PL) was observed for three strained Si-SiGe-on-insulator wafers with different Ge fractions, which were fabricated using Ge condensation by the dry oxidation of SiGe on a silicon-on-insulator substrate. PL signals were excited by an Ar+ laser operated at 514 nm and a HeCd laser operated at 325 nm. The PL signal excited by the 325 nm line was confirmed to emit only from layers on buried oxide. Under 325 nm line excitation, the PL signals of wafers with 13 and 18% Ge fractions are deep-level-free in the PL energy range from 0.77 eV to the band gap, implying high wafer qualities. However, a broad PL signal could be observed for a wafer with a 25% Ge fraction, which was confirmed to be defect-related by varying laser power. Integrated band-band PL signal intensity decreased with increasing Ge fraction, implying a wafer quality dependence on Ge fraction. The dependence of the PL signal intensity on Ge fraction was discussed in detail.

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