Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions

Dong Wang, Hiroshi Nakashima, Koji Matsumoto, Masahiko Nakamae

研究成果: ジャーナルへの寄稿学術誌査読

31 被引用数 (Scopus)

抄録

Photoluminescence (PL) was observed for three strained Si-SiGe-on-insulator wafers with different Ge fractions. The PL signals of wafers with 13% and 18% Ge fractions are deep-level free, implying high wafer qualities. A defect-related broad PL signal could be observed for a wafer with 25% Ge fraction. The dependences of the PL signals as well as the wafer's qualities on Ge fractions were discussed in detail.

本文言語英語
論文番号251928
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
87
25
DOI
出版ステータス出版済み - 2005

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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