Photoluminescence of layer semiconductor p-GaSe doped with Mg

S. Shigetomi, T. Ikari, H. Nakashima

    研究成果: ジャーナルへの寄稿記事

    9 引用 (Scopus)
    元の言語英語
    ページ(範囲)k21-k24
    ジャーナルPhysica Status Solidi (A) Applied Research
    156
    発行部数2
    DOI
    出版物ステータス出版済み - 1 1 1996

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    Semiconductor doping
    Light emission
    Stacking faults
    crystal defects
    Thermal effects
    light emission
    Magnesium
    temperature effects
    Spectrometers
    magnesium
    Quenching
    Photoluminescence
    Energy gap
    Activation energy
    quenching
    Single crystals
    Spectroscopy
    spectrometers
    Semiconductor materials
    activation energy

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    これを引用

    Photoluminescence of layer semiconductor p-GaSe doped with Mg. / Shigetomi, S.; Ikari, T.; Nakashima, H.

    :: Physica Status Solidi (A) Applied Research, 巻 156, 番号 2, 01.01.1996, p. k21-k24.

    研究成果: ジャーナルへの寄稿記事

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