Photoluminescence of (Zno)0.82(inn)0.18 films: Incident light angle dependence

Nanoka Miyahara, Kazuya Iwasaki, Daisuke Yamashita, Daisuke Nakamura, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 被引用数 (Scopus)

抄録

We have fabricated a new semiconducting material, (ZnO)x(InN)1-x (called ZION hereafter), which is a pseudo-binary alloy of wurtzite ZnO (band gap: 3.4 eV) and wurtzite InN (band gap: 0.7 eV). We have succeeded in fabricating epitaxial (ZnO)0.82(InN)0.18 films on ZnO templates by RF magnetron sputtering. XRD measurements show that the full width at half maximum of the rocking curves from (101) plane and (002) plane are significantly small of 0.11˚ and 0.16˚, respectively, indicating good in-plane and out-of-plane crystal alignment. High crystal quality of the films was also proved by deducing the defect density from XRD analysis showing that the edge type dislocation density is low of 8.2×108 cm-2. Furthermore, we observed room temperature photoluminescence from ZION films as a parameter of incident angle of He-Cd laser light. The results indicate that an emission peak of 2.79 eV is originated from ZION.

本文言語英語
ホスト出版物のタイトルTHERMEC 2018
編集者R. Shabadi, Mihail Ionescu, M. Jeandin, C. Richard, Tara Chandra
出版社Trans Tech Publications Ltd
ページ2099-2103
ページ数5
ISBN(印刷版)9783035712087
DOI
出版ステータス出版済み - 2018
イベント10th International Conference on Processing and Manufacturing of Advanced Materials, 2018 - Paris, フランス
継続期間: 7 9 20187 13 2018

出版物シリーズ

名前Materials Science Forum
941 MSF
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

会議

会議10th International Conference on Processing and Manufacturing of Advanced Materials, 2018
国/地域フランス
CityParis
Period7/9/187/13/18

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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