The photoluminescence (PL) at 1.55 μm from semiconducting β-FeSi 2 has attracted a noticeable interest for silicon-based optoelectronic applications. Moreover, its high optical absorption coefficient (higher than 10 5cm -1 above 1.0 eV) allows this semiconducting material to be used as photovoltanics devices. A clear PL spectrum for β-FeSi 2 was observed by Cu or Au coating on Si(001). High-crystal-quality β-FeSi 2 with a low-level nonradiative center was formed on a Cu- or Au- reated Si layer. This method of deposition can be applied to other materials requiring high crystal quality.
|ジャーナル||World Academy of Science, Engineering and Technology|
|出版ステータス||出版済み - 2月 2011|
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