Photoluminescence properties of β-FeSi2 grains on Si with coating Au layer

K. Akiyama, S. Kaneko, Y. Hirabayashi, K. Yokomizo, M. Itakura

研究成果: ジャーナルへの寄稿Conference article

2 引用 (Scopus)

抄録

We have investigated the growth of β-FeSi2 grains on Si(001) substrates with 90-nm-thick gold layer and its photoluminescence (PL) property. X-ray diffraction and scanning electron microscopy observations revealed that coarse island β-FeSi2 grains with sizes from several to tens of micrometers were formed on the Si surface. A clear PL spectrum for the β-FeSi2 grains was observed on as deposited sample by argon-ion laser irradiation to the Si substrate side. The values of the activation energy for a non-radiative recombination path were large, and indicated the formation of high-crystal-quality β-FeSi2 with a low-level non-radiative center without post-annealing.

元の言語英語
記事番号082015
ジャーナルIOP Conference Series: Materials Science and Engineering
18
発行部数SYMPOSIUM 5
DOI
出版物ステータス出版済み - 1 1 2011
イベント3rd International Congress on Ceramics, ICC 2011 - Osaka, 日本
継続期間: 11 14 201011 18 2010

Fingerprint

Photoluminescence
Coatings
Argon
Substrates
Laser beam effects
Gold
Activation energy
Annealing
Ions
X ray diffraction
Crystals
Scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

これを引用

Photoluminescence properties of β-FeSi2 grains on Si with coating Au layer. / Akiyama, K.; Kaneko, S.; Hirabayashi, Y.; Yokomizo, K.; Itakura, M.

:: IOP Conference Series: Materials Science and Engineering, 巻 18, 番号 SYMPOSIUM 5, 082015, 01.01.2011.

研究成果: ジャーナルへの寄稿Conference article

Akiyama, K. ; Kaneko, S. ; Hirabayashi, Y. ; Yokomizo, K. ; Itakura, M. / Photoluminescence properties of β-FeSi2 grains on Si with coating Au layer. :: IOP Conference Series: Materials Science and Engineering. 2011 ; 巻 18, 番号 SYMPOSIUM 5.
@article{4625bcd514774ea08a1c37634c7ae539,
title = "Photoluminescence properties of β-FeSi2 grains on Si with coating Au layer",
abstract = "We have investigated the growth of β-FeSi2 grains on Si(001) substrates with 90-nm-thick gold layer and its photoluminescence (PL) property. X-ray diffraction and scanning electron microscopy observations revealed that coarse island β-FeSi2 grains with sizes from several to tens of micrometers were formed on the Si surface. A clear PL spectrum for the β-FeSi2 grains was observed on as deposited sample by argon-ion laser irradiation to the Si substrate side. The values of the activation energy for a non-radiative recombination path were large, and indicated the formation of high-crystal-quality β-FeSi2 with a low-level non-radiative center without post-annealing.",
author = "K. Akiyama and S. Kaneko and Y. Hirabayashi and K. Yokomizo and M. Itakura",
year = "2011",
month = "1",
day = "1",
doi = "10.1088/1757-899X/18/8/082015",
language = "English",
volume = "18",
journal = "IOP Conference Series: Materials Science and Engineering",
issn = "1757-8981",
publisher = "IOP Publishing Ltd.",
number = "SYMPOSIUM 5",

}

TY - JOUR

T1 - Photoluminescence properties of β-FeSi2 grains on Si with coating Au layer

AU - Akiyama, K.

AU - Kaneko, S.

AU - Hirabayashi, Y.

AU - Yokomizo, K.

AU - Itakura, M.

PY - 2011/1/1

Y1 - 2011/1/1

N2 - We have investigated the growth of β-FeSi2 grains on Si(001) substrates with 90-nm-thick gold layer and its photoluminescence (PL) property. X-ray diffraction and scanning electron microscopy observations revealed that coarse island β-FeSi2 grains with sizes from several to tens of micrometers were formed on the Si surface. A clear PL spectrum for the β-FeSi2 grains was observed on as deposited sample by argon-ion laser irradiation to the Si substrate side. The values of the activation energy for a non-radiative recombination path were large, and indicated the formation of high-crystal-quality β-FeSi2 with a low-level non-radiative center without post-annealing.

AB - We have investigated the growth of β-FeSi2 grains on Si(001) substrates with 90-nm-thick gold layer and its photoluminescence (PL) property. X-ray diffraction and scanning electron microscopy observations revealed that coarse island β-FeSi2 grains with sizes from several to tens of micrometers were formed on the Si surface. A clear PL spectrum for the β-FeSi2 grains was observed on as deposited sample by argon-ion laser irradiation to the Si substrate side. The values of the activation energy for a non-radiative recombination path were large, and indicated the formation of high-crystal-quality β-FeSi2 with a low-level non-radiative center without post-annealing.

UR - http://www.scopus.com/inward/record.url?scp=84898983205&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898983205&partnerID=8YFLogxK

U2 - 10.1088/1757-899X/18/8/082015

DO - 10.1088/1757-899X/18/8/082015

M3 - Conference article

AN - SCOPUS:84898983205

VL - 18

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

SN - 1757-8981

IS - SYMPOSIUM 5

M1 - 082015

ER -