We have investigated the growth of β-FeSi2 grains on Si(001) substrates with 90-nm-thick gold layer and its photoluminescence (PL) property. X-ray diffraction and scanning electron microscopy observations revealed that coarse island β-FeSi2 grains with sizes from several to tens of micrometers were formed on the Si surface. A clear PL spectrum for the β-FeSi2 grains was observed on as deposited sample by argon-ion laser irradiation to the Si substrate side. The values of the activation energy for a non-radiative recombination path were large, and indicated the formation of high-crystal-quality β-FeSi2 with a low-level non-radiative center without post-annealing.
|ジャーナル||IOP Conference Series: Materials Science and Engineering|
|出版ステータス||出版済み - 2011|
|イベント||3rd International Congress on Ceramics, ICC 2011 - Osaka, 日本|
継続期間: 11月 14 2010 → 11月 18 2010
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